1 power transistors 2sB1417, 2sB1417a silicon pnp epitaxial planar type for power amplification complementary to 2sd2137 and 2sd2137a n features l high forward current transfer ratio h fe which has satisfactory linearity l low collector to emitter saturation voltage v ce(sat) l allowing automatic insertion with radial taping n absolute maximum ratings (t c =25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings C60 C80 C60 C80 C6 C5 C3 15 2.0 150 C55 to +150 unit v v v a a w ?c ?c 2sB1417 2sB1417a 2sB1417 2sB1417a t c =25 c ta=25 c n electrical characteristics (t c =25?c) parameter collector cutoff current collector cutoff current emitter cutoff current collector to emitter voltage forward current transfer ratio base to emitter voltage collector to emitter saturation voltage transition frequency turn-on time storage time fall time symbol i ces i ceo i ebo v ceo h fe1 * h fe2 v be v ce(sat) f t t on t stg t f conditions v ce = C60v, v be = 0 v ce = C80v, v be = 0 v ce = C30v, i b = 0 v ce = C60v, i b = 0 v eb = C6v, i c = 0 i c = C30ma, i b = 0 v ce = C4v, i c = C1a v ce = C4v, i c = C3a v ce = C4v, i c = C3a i c = C3a, i b = C 0.375a v ce = C5v, i c = C 0.2a, f = 10mhz i c = C1a, i b1 = C 0.1a, i b2 = 0.1a, v cc = C50v min C60 C80 70 10 typ 30 0.3 1.0 0.2 max C100 C100 C100 C100 C100 250 C1.8 C1.2 unit m a m a m a v v v mhz m s m s m s 2sB1417 2sB1417a 2sB1417 2sB1417a 2sB1417 2sB1417a note: ordering can be made by the common rank (pq rank h fe1 = 70 to 250) in the rank classification. * h fe1 rank classification rank q p h fe1 70 to 150 120 to 250 unit: mm 1:base 2:collector 3:emitter mt4 type package 1.0 10.0 0.2 0.55 0.1 2.5 0.2 2.5 0.2 4.2 0.2 13.0 0.2 2.5 0.2 18.0 0.5 solder dip 5.0 0.1 2.25 0.2 1.2 0.1 0.65 0.1 0.55 0.1 c1.0 90 c1.0 123 1.05 0.1 0.35 0.1 www..net
2 power transistors 2sB1417, 2sB1417a p c ta i c v ce v ce(sat) i c i c v be h fe i c f t i c c ob v cb t on , t stg , t f i c area of safe operation (aso) 0 160 40 120 80 140 20 100 60 0 20 15 5 10 (1) t c =ta (2) without heat sink (p c =2.0w) (1) (2) ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 0 ?2 ?0 ? ? ? ? 0 ? ? ? ? ? ? t c =25?c ?0ma ?0ma ?0ma ?0ma ?0ma ?0ma ?0ma ?0ma ?0ma i b =?00ma collector to emitter voltage v ce ( v ) collector current i c ( a ) ?0.1 1 ?0 ?00 ?0.3 3 ?0 ?0.01 ?0.03 ?0.1 ?0.3 ? ? ?0 ?0 ?00 i c /i b =8 25?c 100?c t c =?5?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0 ?.0 ?.6 ?0.4 ?.2 ?0.8 0 ? ? ? ? ? ? v ce =?v t c =100?c ?5?c 25?c base to emitter voltage v be ( v ) collector current i c ( a ) ?0.01 ?0.1 ? ?0 ?0.03 ?0.3 ? 10 30 100 300 1000 3000 10000 30000 100000 v ce =?v t c =100?c 25?c ?5?c collector current i c ( a ) forward current transfer ratio h fe ?0.01 ?0.1 1 ?0 ?0.03 ?0.3 3 1 3 10 30 100 300 1000 3000 10000 v ce =?v f=10mhz t c =25?c collector current i c ( a ) transition frequency f t ( mhz ) ? ? ?0 ?0 ?00 1 1000 100 10 3 30 300 i e =0 f=1mhz t c =25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 0 4 ? ? ? 0.01 0.03 0.1 0.3 1 3 10 30 100 t stg t on t f pulsed t w =1ms duty cycle=1% i c /i b =5 (i b1 =? b2 ) v cc =?00v t c =25?c collector current i c ( a ) switching time t on ,t stg ,t f ( m s ) ? ?0 ?00 ?000 ? ?0 ?00 ?0.01 ?0.03 ?0.1 ?0.3 ? ? ?0 ?0 ?00 t=1ms i cp i c 10ms 2sB1417a 2sB1417 non repetitive pulse t c =25?c dc collector to emitter voltage v ce ( v ) collector current i c ( a ) www..net
3 power transistors 2sB1417, 2sB1417a r th(t) t 10 ? 10 10 ? 10 ? 10 ? 110 3 10 2 10 4 0.1 1 10 100 10000 1000 (1) (2) note: r th was measured at ta=25?c and under natural convection. (1) without heat sink (2) with a 50 50 2mm al heat sink time t ( s ) thermal resistance r th (t) ( ?c/w ) www..net
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